Surface Potential Model of Double Metal Fin Gate Tunnel FET

Abstract

In this paper, we have proposed a surface model of double material Fin-shape gatetunnel FET (DM Fin TFET) analyzed based on a perimeter-weighted method for low voltage applications. The model obtained by the total device is separated into symmetrical and asymmetrical, and then solved by the 3D Poisson equation. The surface potential and the electrical field are obtained by solving the Poisson equation and the drain current is finally estimated using Kane’s model to measure the tunneling generation rate. As compared with exiting model of single metal fin TFET is improved performance of the DM Fin-Gate TFET device i.e., enhanced ON-state current (I_ON), and low off-state current (I_OFF) and also improved the subthreshold swing(SS) of the proposed device. Our proposed model outputs are evaluated with TCAD device simulation software.